Mr Andy Chuang, President – Episil Technologies Inc | Topic: SiC Foundry Introduction from Episil
Silicon Carbide (SiC) power devices allow larger current density, faster switching and better performance at high temperature, which gives SiC to gain acceptance and accelerated adoption in new applications among EV/PHEV, PV/Solar, Server, Power Plant, and Railway market. Homoepitaxial growth on 4-H – SiC is they key technology in fabricating low-loss power devices. Device manufacturing mostly bases on existing Si based Fabs, it created complexity to balance cost, productivity and efficiency. Stand on chip maker’s demand, Episil Technologies Inc. provide one-stop shop to accommodate customer to design his own product. To catch rapid business and enhanced competitiveness, Episil provide a promising cycle time for wafer manufacturing, and continue process roadmap for further product development. It is best choice for those who require SiC foundry.