MR LW Yong, CTO – Carsem Semiconductor | Topic: An OSAT Automotive Journey
A synthetic description of the technology of modern power semiconductor devices is given. The first part deals with devices based on silicon technology. The second part describes the ones based on WBG materials (SiC and GaN). The first part is also split in two sections: the unipolar devices (Power Mosfets, Schottky diodes) and the bipolar devices (PiN diodes, BJTs, IGBTs). Firstly a quick explanation of the device phisycs is given, then a description of technology evolution. Eventually some notes about market trend is given.