Mustafa Pinarbasi is the CTO and Sr. Vice President of Magnetics Technology at Spin Memory (Previously Spin Transfer Technologies). Before joining Spin Memory in 2013, Dr. Pinarbasi was a CTO and SVP of Technology Development at SoloPower, Advanced Technology Department Manager at Hitachi GST and Distinguished Engineer at IBM. His accomplishments at IBM include the development of the giant magneto-resistance sensor used in the first GMR-based hard disk drives (HDD) and pioneering the adoption of ion beam sputtering technology into the read sensor production. He led the development of tunneling magneto-resistance (TMR) read head processing at Hitachi GST and the development of flexible and light weight solar panels at SoloPower. Dr. Pinarbasi holds a Ph.D. from the University of Illinois at Urbana-Champaign. He is an inventor with over 200 U.S. patents, has authored or co-authored over 30 scientific publications and has received numerous industry awards.